AVS 50th International Symposium
    Nanometer Structures Tuesday Sessions
       Session NS-TuP

Paper NS-TuP1
Electrical Characteristics of Semiconductor-Atomic Superlattice for Silicon-on-Insulator Application

Tuesday, November 4, 2003, 5:30 pm, Room Hall A-C

Session: Poster Session
Presenter: Y.-J. Seo, DAEBUL University, Korea
Authors: Y.-J. Seo, DAEBUL University, Korea
R. Tsu, University of North Carolina at Charlotte
Correspondent: Click to Email
Silicon on insulator (SOI) structure is a critical material for future ultra-large scale integration (ULSI). Recently, we had been reported that the Si-O superlattice can be serve as an epitaxially grown insulating layer as possible replacement of SOI. Up to a bias of 30 V, the field inside the multi-layer structure reaches ~ 3x10@super 7@ V/cm. There is no sign of breakdown. However, the low voltage isolation is not quite sufficient for implement as a substitute for silicon on insulator. In this paper, the monolayers of oxygen atoms sandwitched between the adjacent silicon layers formed by ultra high vacuum-chemical vapor deposition (UHV-CVD). This multi-layer Si-O superlattice forms a new type of superlattice, semiconductor-atomic superattice (SAS). According to the preliminary results, high-resolution cross-sectional transmission electron microscopy (HRTEM) shows epitaxial system. Also, the current-voltage (I-V) measurement results show the stable and good insulating behavior with high breakdown voltage. It is apparent that the system may form an epitaxially grown insulating layer as possible replacement of SOI, a scheme investigated as future generation of high efficient and high density CMOS on SOI. Since our scheme is epitaxial, three- dimensional integrated circuits (3D-ICs) may finally be realized in silicon-based technology. Therefore it is important to determine how good is the epitaxially grown silicon beyond a relatively thick Si-O superlattice. This work was supported by Grant(R05-2002-000-00565-0) from the Basic Research Program of the Korea Science & Engineering Foundation.