AVS 50th International Symposium
    Nanometer Structures Monday Sessions
       Session NS-MoM

Paper NS-MoM4
Formation of 31P Qubit Test Structures by Single Ion Implantation

Monday, November 3, 2003, 9:20 am, Room 316

Session: Quantum Dots and Nanoscale Devices
Presenter: T. Schenkel, Lawrence Berkeley National Laboratory
Authors: T. Schenkel, Lawrence Berkeley National Laboratory
J. Bokor, UC Berkeley and Lawrence Berkeley National Laboratory
D.H. Schneider, Lawrence Livemore National Laboratory
A. Persaud, Lawrence Berkeley National Laboratory
S.-J. Park, UC Berkeley and Lawrence Berkeley National Laboratory
J. Nilsson, Lawrence Livemore National Laboratory
J.A. Liddle, Lawrence Berkeley National Laboratory
Correspondent: Click to Email
Electron and nuclear spins of 31P atoms in silicon are promising candidates for the realization of a scalable solid state quantum computer architecture. Single ion implantation with low energy (<10 keV), highly charged ions offers a path to the formation of single 31P atom arrays. We describe our development of single ion placement technology and the integration of atom arrays with control gates and single electron transistor readout structures. Silicon nanowire based single electron transistors are formed in SOI (silicon on insulator) by electron beam lithography and stress limited oxidation. We will discuss critical process integration issues. @footnote 1@ @FootnoteText@ @footnote 1@ We thank the staff of the UC Berkeley Microlab for technical support. This work was supported by the National Security Agency and Advanced Research and Development Activity under Army Research Office contract number MOD707501, and by the U. S. Department of Energy under contract No. DE-AC03-76SF00098. Work at LLNL was performed under the auspices of the U. S. Department of Energy under contract No. W-7405-ENG-48.