AVS 50th International Symposium
    Magnetic Interfaces and Nanostructures Wednesday Sessions
       Session MI-WeP

Paper MI-WeP11
Epitaxial Growth, Structural, and Magnetic Properties of a Chalcopyrite Magnetic Semiconductor: MnGeN2

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: L. Li, University of Wisconsin, Milwaukee
Authors: S. Hardcastle, University of Wisconsin, Milwaukee
L. Li, University of Wisconsin, Milwaukee
Correspondent: Click to Email
Epitaxial thin films of MnGeN2 were grown on Al2O3(0001), 6H-SiC(0001), and MgO(111) substrates using ECR plasma assisted MBE at 500 C. In situ RHEED studies indicated that the growth was 3D, consistent with ex situ AFM investigations. X-ray diffraction studies revealed that the films are single-phased material. Hysteresis loop with a coercive field of 100 Oe was observed at 300 K using a SQUID magnetometer, indicating ferromagnetic ordering at room temperature.