AVS 50th International Symposium
    Magnetic Interfaces and Nanostructures Wednesday Sessions
       Session MI-WeP

Paper MI-WeP10
Characterization of Transition Metal Doped CVD-grown ZnO Films

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: R.A. Bartynski, Rutgers University
Authors: D. Hill, Rutgers University
J. Quinn, Rutgers University
L. Wielunski, Rutgers University
R.A. Bartynski, Rutgers University
P. Wu, Rutgers University
Y. Lu, Rutgers University
G. Popov, Rutgers University
M. Greenblatt, Rutgers University
Correspondent: Click to Email
A crucial element for the success of spintronics is finding a material that combines the desirable properties of ferromagnets and semiconductors. Diluted magnetic semiconductors (DMS) are intriguing materials that offer the possibility of studying magnetic phenomena in crystals with a simple band structure and excellent magneto-optical and transport properties. ZnO, a wide bandgap (~3.3 eV) semiconductor that has received increasing attention due to its broad applications and its many desirable material properties, has recently has been identified as a promising DMS candidate for room temperature spintronics. We have characterized the chemical, compositional, and magnetic properties of TM-doped ZnO films grown by MOCVD. Doping using V, Mn, Fe, Co, and Ni has been investigated. X-ray photoelectron spectroscopy indicates that the TM dopant is in the 2+ oxidation state and thus may be substitutional for Zn. Squid magnetometry measurement show that the Mn- and Fe-doped films exhibit ferromagnetic behavior, with Mn-doped films having a Curie temperature of ~ 45K. For Fe-doped films, the Curie temperature is above room temperature. Both Rutherford backscattering spectrometry and XPS depth profiling indicate that Mn and Ni show extensive diffusion while Fe and Co exhibit more penetration into the ZnO film.