AVS 50th International Symposium
    Magnetic Interfaces and Nanostructures Thursday Sessions
       Session MI+SC-ThM

Paper MI+SC-ThM10
Elaboration and Characterisation of Cobalt Doped ZnO Thin Films for Spintronic Applications

Thursday, November 6, 2003, 11:20 am, Room 316

Session: New Spintronic Materials
Presenter: A. Anane, UMP CNRS-Thales and Paris XI University, France
Authors: A. Anane, UMP CNRS-Thales and Paris XI University, France
K. Rode, UMP CNRS-Thales and Paris XI University, France
J.L. Maurice, UMP CNRS-Thales and Paris XI University, France
J.P. Contour, UMP CNRS-Thales and Paris XI University, France
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ZnO is a large gap II-VI semiconductor potentially interesting for UV opto-electronic applications. We have investigated the structural and the magnetic properties of cobalt substituted ZnO thin films deposited on sapphire (0001) substrates by pulsed laser deposition. The films show clear ferromagnetic behavior up to 400K, the saturation moment does not exceed 1.3 µB / Co atom which far away from is expected for the ionic Co2+ (3d7). We have ruled out parasitic phases as the origin of the measured magnetism by many experimental techniques, including High resolution transmission electron microscopy, X-ray edge spectroscopy and X-ray magnetic-circular-dichroism. Preliminary transport measurements on magnetic tunnel junctions based on Zn0.75Co0.25O will be presented.