AVS 50th International Symposium
    Magnetic Interfaces and Nanostructures Friday Sessions
       Session MI+SC-FrM

Paper MI+SC-FrM6
Electrical Spin Injection from Ferromagnetic Metal/Tunnel Barrier Injectors into AlGaAs/GaAs Quantum Well Structures

Friday, November 7, 2003, 10:00 am, Room 316

Session: Semiconductor Spin Injection
Presenter: X. Jiang, Stanford University
Authors: X. Jiang, Stanford University
R. Shelby, IBM Almaden Research Center
R. Wang, Stanford University
R. Macfarlane, IBM Almaden Research Center
G. Solomon, Stanford University
J. Harris, Stanford University
S. Parkin, IBM Almaden Research Center
Correspondent: Click to Email
Electrical injection of highly spin-polarized electrons into semiconductors is an essential component for the operation of spintronic devices. In this talk, we present a study of electrical spin injection into semiconductors from injectors comprised of ferromagnetic metals and tunnel barriers. An AlGaAs/GaAs quantum well structure is used to optically detect the spin-polarization of the injected electrons in the semiconductor. Large polarization of the electroluminescence from the quantum well is observed. The bias dependence and temperature dependence of the electroluminescence polarization will be discussed. This work is supported by DARPA.