AVS 50th International Symposium
    Electronic Materials and Devices Tuesday Sessions
       Session EM+SC-TuA

Invited Paper EM+SC-TuA7
Making Contact - The Evolution of Materials for Silicon Device Contacts and Interconnections

Tuesday, November 4, 2003, 4:00 pm, Room 310

Session: 50th Anniversary Sessions: Electronic Materials
Presenter: J.M.E. Harper, University of New Hampshire
Authors: J.M.E. Harper, University of New Hampshire
S.M. Rossnagel, IBM T.J. Watson Research Center
F.M. d'Heurle, IBM T.J. Watson Research Center
L. Clevenger, IBM T.J. Watson Research Center
C. Lavoie, IBM T.J. Watson Research Center
C. Cabral, Jr., IBM T.J. Watson Research Center
Correspondent: Click to Email
The evolution of silicon device technology during the 50-year history of the AVS required not only the constant miniaturization of the transistor, but the concurrent miniaturization of contact metallurgy and interconnection structures. With decreasing area and thickness came a series of materials challenges related to deposition processes, interdiffusion, compound formation and phase stability. These challenges were overcome with a steady stream of innovations in alloy metallurgy, deposition methods, diffusion barriers and understanding of phase formation that apply far beyond the field of microelectronics. Many of these advances were developed by active AVS members and award winners, since the AVS has provided a fertile professional arena for bringing together the necessary scientific and engineering perspectives. Examples will be taken from the development of aluminum-copper and copper interconnections and from the evolution of titanium, cobalt and nickel silicide contact metallurgy.