AVS 50th International Symposium
    Electronic Materials and Devices Wednesday Sessions
       Session EM+SC+OF-WeA

Invited Paper EM+SC+OF-WeA7
Growth and Applications of Epitaxial Metal-semiconductor Nanocomposite Structures

Wednesday, November 5, 2003, 4:00 pm, Room 310

Session: Future Issues in Electronics and Optoelectronics
Presenter: A.C. Gossard, University of California, Santa Barbara
Authors: A.C. Gossard, University of California, Santa Barbara
M. Hanson, University of California, Santa Barbara
D. Driscoll, University of California, Santa Barbara
Correspondent: Click to Email
We explore the growth and ovegrowth of nanoscale semi-metallic islands in GaAs-based semiconductors. MBE-grown ErAs and ErSb islands grow epitaxially and coherently on the semiconductor surfaces with particle dimensions that are controlled by the deposition growth parameters. The islands can be overgrown with epitaxial semiconductors, and further layers of islands and semiconductor films can be grown to form superlattices of layers of metallic islands. The distribution of islands governs the electrical and optical properties of the nanocomposites, including Fermi level position, carrier mobility, photocarrier lifetimes, plasma properties, barrier formation and carrier tunneling.