AVS 50th International Symposium
    Applied Surface Science Thursday Sessions
       Session AS-ThA

Paper AS-ThA4
Photon Angle Dependence of Plasmon Loss Measured by the Double Angular Photoelectron Integrated Analyzer System

Thursday, November 6, 2003, 3:00 pm, Room 324/325

Session: Electron and Photon Spectroscopies
Presenter: A. Tanaka, ULVAC-PHI, Inc., Japan
Authors: A. Tanaka, ULVAC-PHI, Inc., Japan
H. Yoshikawa, NIMS, Japan
M. Kimura, SPring-8 Service, Japan
S. Fukushima, NIMS, Japan
Correspondent: Click to Email
Plasmon loss peaks associated with photoelectron peaks from the silicon specimen is measured. The analyzer and the specimen are tilted simultaneously with maintaining the emission angle constant. This tilting effectively changes the incident angle of photons to the specimen. The angle of photon incidence was ranged from 35 to 90 degree. It caused a change of relative intensity of 1st plasmon loss peaks to the original photoelectron peaks. Photon energy was chosen to match the Si 1s photoelectron energy at the Si 2s energy excited by Mg K@alpha@ x-ray. Ellipsoidal andulation is applied for the synchrotron radiation to simulate the x-ray used for X-ray photoelectron spectroscopy. 3 loss peaks generated by Si 1s, Si 2s and Si 2p are compared. The plasmon loss ratios to mother peaks approximately 10% reduced according to the angle of incidence for all of these spectra, and reduced more at the total reflection conditions. Only for total reflection conditions, this result shows the limitation of excitation range close to the surface, as the energy loss zone becomes smaller comparable with electron inelastic mean free paths. However, this phonomenon is different from surface effect as the emission angle was kept constant at 0±2° and acceptance angle of the analyzer smaller than 10°. When we require precise quantification, we have to consider energy loss process generated in deeper range, too.