AVS 49th International Symposium
    Thin Films Tuesday Sessions
       Session TF-TuM

Paper TF-TuM8
Thin Films of TiSiC MAX Phase - Growth, Characterisation and Properties

Tuesday, November 5, 2002, 10:40 am, Room C-101

Session: Mechanical Properties of Thin Films
Presenter: J. Emmerlich, Linköping University Sweden
Authors: J. Emmerlich, Linköping University Sweden
J.-P. Palmquist, Uppsala University, Sweden
T. Seppänen, Linköping University, Sweden
J. Molina, Linköping University, Sweden
U. Jansson, Uppsala University, Sweden
J. Birch, Linköping University, Sweden
P. Isberg, ABB Group Service Center AB, Sweden
L. Hultman, LinköpingUniversity, Sweden
Correspondent: Click to Email

Ti@sub 3@SiC@sub 2@ a so-called MAX-Phase (M: early transition metal; A: element of A-group III, IV (V); X: C or N) with a chemical composition of M@sub n+1@AX@sub n@ belongs to a new class of ternary carbides. The unique compilation of properties like high electrical and thermal conductivity, ductility, low friction additional to high oxidation and thermal shock resistance make for highly interesting materials. The Ti@sub 3@SiC@sub 2@ is readily machinable as well as damage tolerant. Polycrystalline Ti@sub 3@SiC@sub 2@ in bulk form has been investigated and well-characterised since late 1960s. Single crystal Ti@sub 3@SiC@sub 2@ thin films were recently reported by Palmquist et al. Magnetron sputtering was employed as deposition technique using either Ti and Si targets with a C@sub 60@ evaporation source or deposition from a stoichiometric Ti@sub 3@SiC@sub 2@ target. This presentation describes a third and new method of employing three single-element-targets: Ti, Si and C. We could establish epitaxial and single-crystalline growth of Ti@sub 3@SiC@sub 2@ above 700°C. Best results were achieved with -30 V bias and using TiC as nucleation layer. Two epitaxial orientations were deposited on MgO: Ti@sub 3@SiC@sub 2@(0001)//TiC(111)//MgO(111) and Ti@sub 3@SiC@sub 2@(104)//TIC(100)//MgO(100). Deviations in Si content led to a mixture of Ti@sub 3@SiC@sub 2@ and the new Ti@sub 4@SiC@sub 3@ MAX-phase. Friction measurements carried out with a Hysitron system gave values of µ lower than 0.1. The E-modulus was 325GPa. A conductivity of 4x10@super 6@ (@ohm@m)@super -1@ was reported. Nano indentations and nano-tribology experiments in situ AFM and ex situ TEM were made to investigate the deformation behaviour and revealed delaminations, pile-up and kink formation around the indent.