AVS 49th International Symposium
    Thin Films Monday Sessions
       Session TF-MoM

Paper TF-MoM10
Efficient Infrared Emission for Zinc Sulphide: Rare Earth Doped Thin Films

Monday, November 4, 2002, 11:20 am, Room C-101

Session: Optical Thin Films
Presenter: A.S. Kale, University of Florida
Authors: A.S. Kale, University of Florida
W. Glass, University of Florida
M. Davidson, University of Florida
P.H. Holloway, University of Florida
Correspondent: Click to Email
Infrared emitters (IR) are widely being used for a variety of applications ranging from commercial based fiber optic communication devices and industrial gas sensors to remote controls for televisions. ZnS doped rare earth fluoride thin films typically 1 micron thick have been fabricated by RF sputter deposition in the conventional metal-insulator-semiconductor-insulator-metal configuration as novel structures for emission of IR radiation. The current study investigates three different kinds of phosphors, namely, ZnS:TmF@sub3@, ZnS:NdF@sub3@ and ZnS:ErF@sub3@ for their IR versus visible emission. Electroluminescence has been studied before and after annealing at temperatures up to 510°C to determine the effects on the emission properties. As annealing improves the crystallinity of the film, the emission improves. Emission spectra of the devices have been measured at wavelengths ranging from 0.35 to 1.5 microns, and the films studied for their emission efficiency and luminescent decay times. Methods of enhancing the IR with respect to the visible emission will be reported, including codoping with two or more rare earth elements, interfacial modifications and conditions of annealing.