AVS 49th International Symposium
    Thin Films Monday Sessions
       Session TF-MoA

Paper TF-MoA4
CVD Formed p-type ZnO Thin Films

Monday, November 4, 2002, 3:00 pm, Room C-101

Session: Transparent Conductive Coatings
Presenter: X. Li, National Renewable Energy Laboratory
Authors: X. Li, National Renewable Energy Laboratory
Y. Yan, National Renewable Energy Laboratory
T.A. Gessert, National Renewable Energy Laboratory
C. Perkins, National Renewable Energy Laboratory
H.R. Moutinho, National Renewable Energy Laboratory
T.J. Coutts, National Renewable Energy Laboratory
Correspondent: Click to Email
We have fabricated zinc oxide (ZnO) films that demonstrate a p-type behavior by using a metalorganics chemical vapor deposition (MOCVD). In our low pressure MOCVD, without any plasma enhance, the Zn precursor: diethylzine (DEZ) is reacted with the oxygen and nitric oxide (NO) gas at the temperature range between 200° and 500°C. The p-type behave is only observed on those films formed by DEZ and NO gas. In this reaction, the NO gas is used to supply both O and N to form an N-doped ZnO (ZnO:N) film. The highest N concentration obtained in our ZnO:N films is ~3 at.%, which is highest N-incorporation level reported for ZnO:N films. Hole concentrations of the films are in the range of 1.0x10@super15@ cm@super-3@ - 1.0x10@super18@ cm@super-3@, with mobility varied from the values of 260 cm@super2@ V@super-1@s@super-1@ to 0.7 cm@super2@ V@super-1@s@super-1@. The minimum film resistivity achieved is ~20 @ohm@-cm.