AVS 49th International Symposium
    Surface Science Tuesday Sessions
       Session SS3-TuA

Paper SS3-TuA1
High Quality Nanoscale Interfaces between Metals and Metal/Oxides: Co on Fully Hydroxylated Sapphire

Tuesday, November 5, 2002, 2:00 pm, Room C-112C

Session: Metal/Oxide Surfaces
Presenter: D.R. Jennison, Sandia National Laboratories
Authors: S.A. Chambers, Pacific Northwest National Laboratory
T. Droubay, Pacific Northwest National Laboratory
D.R. Jennison, Sandia National Laboratories
T.R. Mattsson, Sandia National Laboratories
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We present experimental and theoretical results that show Co metal deposited on fully hydroxylated alpha-Al2O3(0001) at room temperature produces a chemical reaction that leads to laminar growth of the metal film. A fraction of the initial metal dose is oxidized, and a concomitant amount of hydroxyl is reduced, resulting in hydrogen being released. The resulting Co cations are within the top layer of the oxide. These bind ionically to the substrate, but are also bound to neighboring metal atoms. Stronger interfacial binding results and near layer-by-layer metal growth is achieved, with good metal morphology just beyond the third layer. We propose direct hot reactions are responsible and many other metals and oxides should display this phenomenon. All work was supported by the US Dept. of Energy.