AVS 49th International Symposium
    Surface Science Monday Sessions
       Session SS2-MoA

Paper SS2-MoA2
Competing Classical and Quantum Effects in Shape Relaxation of a Metallic Island

Monday, November 4, 2002, 2:20 pm, Room C-110

Session: Nucleation & Growth of Metals on Oxides & Semiconductors
Presenter: H. Okamoto, Rowland Institute for Science
Authors: H. Okamoto, Rowland Institute for Science
D. Chen, Rowland Institute for Science
T. Yamada, NASA Ames Research Center
Correspondent: Click to Email
Pb islands grown on a silicon substrate transform at room temperature from the initially flattop facet geometry into an unusual ring shape with a volume-preserving mass transport process catalysed by the tip electrical field of a scanning tunnelling microscope. The formation of such ring shape morphology results from the competing classical and quantum effects in the shape relaxation. The latter also leads to a sequential re-growth on alternating strips of the same facet defined by the underlying substrate steps, showing for the first time the dynamical impact of the quantum size effect on the stability of a nanostructure.