AVS 49th International Symposium
    Surface Science Tuesday Sessions
       Session SS-TuP

Paper SS-TuP14
RHEED and STM Study of Initial-stage Structural Change of Si(100) Surface Induced by Exposure to Ethylene Gas and Annealing

Tuesday, November 5, 2002, 5:30 pm, Room Exhibit Hall B2

Session: Surface Science Poster Session
Presenter: T. Takami, Visionarts Inc., Japan
Authors: T. Takami, Visionarts Inc., Japan
I. Kusunoki, Tohoku University, Japan
Correspondent: Click to Email
The initial stage of the structural change in clean Si(100) - 2 X 1 surface induced by annealing at 913 K and exposure to ethylene gas has been studied by reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Transmitted bulk Si and particle SiC spots appeared on the RHEED patterns of the ethylene-exposed Si(100) surface. The obtained STM images were in accordance with the respective RHEED patterns. At the flat area of the exposed surface where the RHEED pattern showed twice the periodicity of surface spots and transmitted bulk Si spots, the STM image showed 2 X n (n=6,7,8,9,10,11,12) reconstruction. The obtained 2 X n STM image depended on the bias voltage.