AVS 49th International Symposium
    Surface Science Tuesday Sessions
       Session SS-TuP

Paper SS-TuP11
Atomic Structure of Bare Si Dimer on H/Si(100) Surface

Tuesday, November 5, 2002, 5:30 pm, Room Exhibit Hall B2

Session: Surface Science Poster Session
Presenter: C.C. Hwang, POSTECH, Korea
Authors: C.C. Hwang, POSTECH, Korea
C. Jeon, Sung Kyun Kwan University, Korea
K.-J. Kim, POSTECH, Korea
T.-H. Kang, POSTECH, Korea
K.W. Ihm, POSTECH, Korea
B. Kim, POSTECH, Korea
C.-Y. Park, Sung Kyun Kwan University, Korea
Correspondent: Click to Email
When H adsorbs on the Si(100) surface, H bonds preferentially to Si dangling bonds and can form monohydride, Si-H. The structural, electronic, and chemical properties of the Si(100) surface are considerably modified by H adsorption. Recently, partially H-desorbed Si(100)2x1-H surfaces by thermal annealing or photon irradiation have received much attention, for example, due to its increasing chemical reactivity to H@sub 2@.@footnote 1@ The modified chemical property could be strongly related to the atomic structure of bare Si dimer. It has been reported from scanning tunneling microscopy experiments that untilted dimers, which are different from those on the clean 2x1, are responsible for the exotic phenomenon. Contrary to this assertion, our synchrotron radiation photoemission spectroscopy results obtained at PAL in Korea@footnote 2@ show that bare Si dimers are tilted and similar to those on the clean Si(100)2x1 surface. In this presentation, we will provide Si 2p core level and valence band spectra from partially H-desorbed surfaces and discuss possible origins of the chemical reactivity. @FootnoteText@ @footnote 1@ E. J. Buehler and J. J. Boland, Science 290, 506 (2000). @footnote 2@ C. C. Hwang et al., Phys. Rev. B 64, R201304 (2001).