AVS 49th International Symposium
    Surface Engineering Tuesday Sessions
       Session SE-TuP

Paper SE-TuP6
Copper Seeding on the Tantalum-insulated Silicon Oxide Film by Ion Beam Assisted Deposition for the Growth of Electroless Copper

Tuesday, November 5, 2002, 5:30 pm, Room Exhibit Hall B2

Session: Poster Session
Presenter: H.C. Shih, National Tsing Hua University, Taiwan, R.O.C.
Authors: S. Han, National Taichung Institute of Technology, Taiwan, R.O.C.
C.J. Yang, National Chung Hsing University, Taiwan, R.O.C.
J.H. Lin, National Tsing Hua University, Taiwan, R.O.C.
Z.C. Chang, National Chin-Yi Institute of Technology, Taiwan, R.O.C.
C.H. Hsieh, National Chin-Yi Institute of Technology, Taiwan, R.O.C.
H.C. Shih, National Tsing Hua University, Taiwan, R.O.C.
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The major aim of this study is to combine the techniques of using ion beam assisted deposition (IBAD) and electroless plating to deposit Cu onto a Ta diffusion barrier layer in order to accomplish the ULSI interconnection metallization. Distribution and depth of the implanted Cu was measured by secondary ion mass spectroscopy (SIMS) profiling. The crystallinity of the electroless plated Cu was analyzed by x-ray diffraction (XRD). Cross-sectional transmission electron microscopy (XTEM) and field emission scanning electron microscopy (FESEM) were used to elucidate the growth mechanism of the electroless deposited Cu film on the Cu-seeded layer by IBAD. The surface morphology of the films was observed by atomic force microscopy (AFM). This study successfully combines the techniques of IBAD and electroless plating for Cu to provide an appropriate quality for the gap-filling submicron trenches and vias with excellent step coverage.