AVS 49th International Symposium
    Surface Engineering Tuesday Sessions
       Session SE-TuP

Paper SE-TuP4
Electron Transport Characteristics of Ultrathin Cu Films Analyzed by In-situ ac Impedance Spectroscopy

Tuesday, November 5, 2002, 5:30 pm, Room Exhibit Hall B2

Session: Poster Session
Presenter: S.Y. Park, Hanyang University, Korea
Authors: S.Y. Park, Hanyang University, Korea
Y.H. Hyun, Hanyang University, Korea
J.Y. Rhee, Hoseo University, Korea
Y.P. Lee, Hanyang University, Korea
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The impedance and resistance are measured simultaneously by using in-situ impedance spectroscopy and I-V source during the deposition of Cu films with a thickness of 1 to 7 nm onto a glass substrate. The growth stages of films, such as the discontinuous, semicontinuous, and continuous regimes, are determined by analyzing the AC impedance spectra in addition to the rather traditional DC method. We also observed that the percolation threshold thickness is 2.5 nm by either method and that the boundary for continuous stage is 3.3 nm. The complex dielectric moduli of films thinner and thicker than 2.5 nm could be described with a parallel R-C and a series R-L equivalent circuit, respectively. It is found that the relaxation time and the inductance for the semicontinuous and continuous films are increased with increasing the film thickness, and that the changes are discussed by considering the roughness and grain-boundary scattering effects. The mechanism of growth for a variety of ultrathin films could be elucidated by applying in-situ impedance spectroscopy.