AVS 49th International Symposium
    Magnetic Interfaces and Nanostructures Tuesday Sessions
       Session MI+EL+SC-TuM

Paper MI+EL+SC-TuM5
Ferromagnetism in Mn-implanted Single Crystal Oxides

Tuesday, November 5, 2002, 9:40 am, Room C-205

Session: Ferromagnetic Semiconductors
Presenter: D.P. Norton, University of Florida
Authors: D.P. Norton, University of Florida
S.J. Pearton, University of Florida
B.S. Jeong, University of Florida
Y.W. Heo, University of Florida
A.F. Hebard, University of Florida
N.A. Theodoropoulou, University of Florida
L.A. Boatner, Oak Ridge National Laboratory
Y.D. Park, Seoul National University, Korea
R.G. Wilson, Consultant
Correspondent: Click to Email
Several semiconducting oxides, including ZnO, offer significant potential in providing spin-based functionality. Theoretical predictions suggest that room-temperature carrier-mediated ferromagnetism should be possible in Mn-doped p-type ZnO. In this paper, we report on the synthesis and properties of magnetically-doped semiconducting oxides, including ZnO. While previous efforts report no ferromagnetism in Mn-doped ZnO that is n-type due to group III impurities (consistent with theory), we find ferromagnetism in n-type ZnO that is co-doped with Mn and Sn. Hysteresis was observed in magnetization versus field curves for Mn-implanted n-type ZnO:Sn. Differences in zero field-cooled and field-cooled magnetizations persists up to ~ 150 K for Sn-doped ZnO crystals implanted with 3 at % Mn. These results indicate that ZnO doped with Mn and Sn may prove promising as a ferromagnetic semiconductor for spintronics.