AVS 49th International Symposium
    Magnetic Interfaces and Nanostructures Tuesday Sessions
       Session MI+EL+SC-TuM

Paper MI+EL+SC-TuM11
Suppression of Phase Segregation during MBE Growth of GaMnN Using Nitrogen-Hydrogen Plasma

Tuesday, November 5, 2002, 11:40 am, Room C-205

Session: Ferromagnetic Semiconductors
Presenter: L. Li, University of Wisconsin-Milwaukee
Authors: Y. Cui, University of Wisconsin-Milwaukee
L. Li, University of Wisconsin-Milwaukee
Correspondent: Click to Email
Epitaxial growth of GaMnN by electron-cyclotron-resonance plasma-assisted molecular beam epitaxy using nitrogen-hydrogen plasma was studied by reflection high-energy electron diffraction, scanning electron microscopy, energy dispersive spectroscopy, and x-ray diffraction. The electron diffraction pattern changed from streaky to spotty when hydrogen was added to the nitrogen plasma, indicating that the effective N/Ga ratio was increased. Films grown with nitrogen plasma are phase segregated into GaN and manganese nitrides. In contrast, when nitrogen-hydrogen plasma was used, the films are single phase Ga1-xMnxN, with x can be as high as 0.06. These results indicate that phase segregation can be suppressed by adding hydrogen to the nitrogen plasma during growth.