AVS 49th International Symposium
    Magnetic Interfaces and Nanostructures Tuesday Sessions
       Session MI+EL+SC-TuM

Paper MI+EL+SC-TuM10
Cr-Doped III-V Ferromagnetic Semiconductors

Tuesday, November 5, 2002, 11:20 am, Room C-205

Session: Ferromagnetic Semiconductors
Presenter: M.E. Overberg, University of Florida
Authors: M.E. Overberg, University of Florida
G.T. Thaler, University of Florida
R.M. Frazier, University of Florida
C.R. Abernathy, University of Florida
S.J. Pearton, University of Florida
N.A. Theodoropoulou, University of Florida
A.F. Hebard, University of Florida
R.G. Wilson, Private Consultant
J.M. Zavada, U.S. Army Research Office
Correspondent: Click to Email
Ferromagnetic semiconductors, consisting of a semiconductor host material doped with transition metal ions, are becoming increasingly prevalent in the literature as a candidate for incorporating the spin degree of freedom into device structures. To date, the vast majority of work in this area has centered on the incorporation of Mn into both II-VI and III-V materials by a variety of techniques. However, recent theoretical work has indicated that Cr may be a more suitable dopant for achieving room-temperature ferromagnetism within these materials.@footnote 1@ In this paper, we will report on the preparation of GaCrN, GaCrP, and AlGaCrP by the direct implantation of Cr. The magnetic and magneto-transport (anomolous Hall Effect) properties of these films will be quantified both versus implantation dose (x=0.04, 0.06, 0.10) and versus post-implantation annealing, to identify an optimum combination of dose and annealing conditions. Analysis by SQUID magnetometry of the GaCrN with 6% Cr indicates the presence of a strong ferromagnetic phase with a Curie temperature above the 350 K limit of the magnetometer. High resolution x-ray diffraction (HRXRD) and transmission electron microscopy (TEM) results from the implanted films will also be presented to address the issue of the formation of second phases within these materials. HRXRD rocking curves of the implanted materials will also be used to trace the evolution of the implantation-induced lattice damage with annealing as well as strain-related effects due to the incorporation of Cr into substitutional lattice sites. @FootnoteText@ @footnote 1@ K. Sato, and H. Katayama-Yoshida, Jap. J. Appl. Phys., Pt. 2, 40 (5B), p. L485 (2001).