AVS 49th International Symposium
    Electronic Materials and Devices Monday Sessions
       Session EL+SC+MI-MoA

Paper EL+SC+MI-MoA8
Electrical Characterization of AlN MIS/MIM-structures

Monday, November 4, 2002, 4:20 pm, Room C-107

Session: Metal-Semiconductor Interfaces
Presenter: F. Engelmark, University of Uppsala, Sweden
Authors: F. Engelmark, University of Uppsala, Sweden
J. Westlinder, University of Uppsala, Sweden
I.V. Katardjiev, University of Uppsala, Sweden
J. Olsson, University of Uppsala, Sweden
S. Berg, University of Uppsala, Sweden
Correspondent: Click to Email
The electrical properties of insulating ceramic films such as AlN, Ta@sub 2@O@sub 5@, HfO@sub 2@, ZrO@sub 2@, Al@sub 2@O@sub 3@, etc. are of substantial interest for a number of microelectronic and electro-acoustic applications owing to their chemical stability in harsh environments along with some very interesting electrical properties. In this work, emphasis has been put on the electrical properties of Aluminum nitride (AlN) films. Thin AlN films have been deposited onto Si(100) and Mo/Si(100) substrates. The sputter deposited Mo is polycrystalline, showing a predominant (110) orientation. AlN film growth is performed using different process conditions in a reactive PVD (Physical Vapour Deposition). Both fully textured (0002) polycrystalline and XRD amorphous films have been grown and studied. MIS- and MIM-structures have been fabricated and electrical properties such as dielectric constant, leakage current as well as their high frequency behaviour are investigated. The measurements indicate that the dielectric constant does not vary with crystallinity of the films, and remains constant at a value of 10. Further, the high frequency behaviour of the dielectric constant have been studied in the range 100 MHz to 20 GHz. The leakage current mechanism is also similar for different films and is believed to be Poole-Frenkel controlled. C-V (Capacitance-Voltage) measurements for MIS structures revealed the presence of charges in the interface between the substrate and the dielectric layer. Trapped charge density was estimated to be 3.5*10@super 10@ cm@super -2@.