AVS 49th International Symposium
    Electronic Materials and Devices Monday Sessions
       Session EL+SC+MI-MoA

Paper EL+SC+MI-MoA7
Electrical Contact Behavior of Ni/C60/4H-SiC

Monday, November 4, 2002, 4:00 pm, Room C-107

Session: Metal-Semiconductor Interfaces
Presenter: W. Lu, Fisk University
Authors: W. Lu, Fisk University
W.C. Mitchel, Air Force Research Laboratory
J.R. Landis, University of Dayton Research Institute
T.R. Crenshaw, Fisk University
S.R. Smith, University of Dayton Research Institute
W.E. Collins, Fisk University
Correspondent: Click to Email
Ohmic contact formation of Ni/C60 film on n-type 4H-SiC was investigated. A C60 interfacial layer between Ni film and SiC improves ohmic contact properties significantly. The C60 film was deposited by Langmuir-Blodgett method prior to the Ni film deposition on SiC using DC sputtering method. High quality ohmic contact of Ni/C60/4H-SiC is formed after annealing at 800°C in Ar for two hours with a specific resistance of 1.6 x 10@super -6@ @ohm@cm@super 2@ for the SiC with a doping concentration of 1.8 x 10@super 19@cm@super -3@. Raman spectra reveal that the formation of graphitic carbons by Ni catalytic effects result in the formation of ohmic contact on SiC, and the nano-size graphitic flakes identified by Raman spectroscopy play a key role for ohmic contact formation on SiC. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) show a direct relationship between the graphitized morphological features on the film and ohmic contact behavior.