AVS 49th International Symposium
    Electrochemistry and Fluid-Solid Interfaces Tuesday Sessions
       Session EC-TuP

Paper EC-TuP4
Microstructure in Selective Electrodeposition of Copper on Indium-Tin-Oxide Film

Tuesday, November 5, 2002, 5:30 pm, Room Exhibit Hall B2

Session: Poster Session
Presenter: S. Asakura, Waseda University, Japan
Authors: S. Asakura, Waseda University, Japan
M. Hirota, Waseda University, Japan
A. Fuwa, Waseda University, Japan
Correspondent: Click to Email
This paper describes the use of electrodeposition process to fabricate copper micropatterns on indium tin oxide (ITO) surface using patterned self-assembled monolayers (SAMs) as templates. Thin film ITO has good conductivity and excellent transparency in the visible region, but very few attempts have been made on fabrication of SAMs and electrodeposition of copper on ITO substrates. Micropatterned copper, which has been widely used because of its high electrical conductivity and low cost, is a key requirement since copper provides us with the electronic circuit wires which send signals to the functional molecules on them, electrochromic materials like a part of display, and biosensor. In our study, the organosilane SAMs have been prepared from octadecyltrimethoxysilane (ODS) by chemical vapour deposition (CVD) and irradiated through a TEM grid as a photomask by vacuum ultraviolet (VUV, 172 nm) light for removal of selected SAMs region and creation of electrode region for copper deposition. Lateral force microscopy (LFM) has been used to evaluate the friction differences between photoirradiated and unirradiated areas. SAMs and ITO regions have been also characterized by cyclic voltammetry (CV), from which we could decide selectively electrodeposition condition. It has been found possible to have micropatterned copper utilizing SAMs blocking effect in preventing electron transfer from species in solution through electrodeposition.