| IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11) | |
| Semiconductors | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | SC-MoA1 Invited Paper The Influence of Active Nitrogen Species and Substrate Polarity on the Growth and Doping of GaN Grown by RF Plasma-assisted Molecular Beam Epitaxy T.H. Myers, A.J. Ptak, West Virginia University, L.T. Romano, Xerox Palo Alto Research Center |
| 2:40pm | SC-MoA3 "Functionalizing" the GaN(0001) Surface: The Chemisorption of Organic Amines V.M. Bermudez, Naval Research Laboratory |
| 3:20pm | SC-MoA5 STM Study of Dislocation-Mediated Surface Morphology of GaN Grown by ECR-Plasma Assisted MBE Y. Cui, L. Li, University of Wisconsin |
| 4:00pm | SC-MoA7 Search for the Missing Group-III Flux during AlGaN OMVPE J.R. Creighton, M.E. Coltrin, R.P. Pawlowski, Sandia National Laboratories |
| 4:20pm | SC-MoA8 Invited Paper Models, Concepts and Realizations of Pyroelectronic Heterostructure Devices P. Vogl, G. Zandler, S. Hackenbuchner, J.A. Majewski, O. Ambacher, Technische Universitaet Muenchen, Germany, K. Chu, V. Tilak, R. Dimitrov, L.F. Eastman, Cornell University |
| 5:00pm | SC-MoA10 Ni/Au Ohmic Contacts to p-GaN Epilayers B. Liu, E. Lambers, P.H. Holloway, University of Florida, T. Johnson, D. Guiterrez, K. Kidney, W.B. Alexander, Uniroyal Optoelectronics |