IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Semiconductors Monday Sessions

Session SC+SS-MoM
Oxidation of Semiconductors

Monday, October 29, 2001, 9:40 am, Room 122
Moderator: J.E. Crowell, University of California, San Diego


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Click a paper to see the details. Presenters are shown in bold type.

10:00am SC+SS-MoM2
Coexistence of Active and Passive Oxidation Areas on the Si(100) Surface under Oxygen Cluster Beam Impact
D.V. Daineka, A.F. Ioffe Physicotechnical Institute, Russia, F. Pradère, M. Chatelet, CNRS, Ecole Polytechnique, France, E. Fort, Universités Paris VI et Paris VII, France
10:20am SC+SS-MoM3
An Ab Initio Study of the Initial Oxidation of the Si(100)-(2x1)
Y. Widjaja, C.B. Musgrave, Stanford University
11:00am SC+SS-MoM5
Oxidation of Si(100): Mechanisms of Oxygen Insertion, Migration and Agglomeration
K. Raghavachari, Agere Systems
11:20am SC+SS-MoM6
Fundamental Aspects of Silicon Oxidation: O@sub 2@ and H@sub 2@O Reaction with Si(100) and H-passivated Si Surfaces
Y.J. Chabal, Agere Systems, A. Esteve, LAAS, France, X. Zhang, E. Garfunkel, Rutgers University, K. Raghavachari, Agere Systems
11:40am SC+SS-MoM7
Displacement of Surface As Atoms by Insertion of Oxygen Atoms into As-Ga Backbonds
M.J. Hale, S.I. Yi, J.Z. Sexton, A.C. Kummel, University of California, San Diego