IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11) | |
Semiconductors | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
10:00am | SC+SS-MoM2 Coexistence of Active and Passive Oxidation Areas on the Si(100) Surface under Oxygen Cluster Beam Impact D.V. Daineka, A.F. Ioffe Physicotechnical Institute, Russia, F. Pradère, M. Chatelet, CNRS, Ecole Polytechnique, France, E. Fort, Universités Paris VI et Paris VII, France |
10:20am | SC+SS-MoM3 An Ab Initio Study of the Initial Oxidation of the Si(100)-(2x1) Y. Widjaja, C.B. Musgrave, Stanford University |
11:00am | SC+SS-MoM5 Oxidation of Si(100): Mechanisms of Oxygen Insertion, Migration and Agglomeration K. Raghavachari, Agere Systems |
11:20am | SC+SS-MoM6 Fundamental Aspects of Silicon Oxidation: O@sub 2@ and H@sub 2@O Reaction with Si(100) and H-passivated Si Surfaces Y.J. Chabal, Agere Systems, A. Esteve, LAAS, France, X. Zhang, E. Garfunkel, Rutgers University, K. Raghavachari, Agere Systems |
11:40am | SC+SS-MoM7 Displacement of Surface As Atoms by Insertion of Oxygen Atoms into As-Ga Backbonds M.J. Hale, S.I. Yi, J.Z. Sexton, A.C. Kummel, University of California, San Diego |