| 2:00pm |
EL-ThA1 Invited Paper
In-situ Analysis, Monitoring and Control of III-V-Semiconductor Epitaxial Growth
W. Richter, TU Berlin, Germany |
| 2:40pm |
EL-ThA3
Direct Numerical Inversion of Real-time Ellipsometric Data for Monitoring and Control of Optical Filter Deposition
D. Kouznetsov, A. Hofrichter, B. Drevillon, Ecole Polytechnique CNRS, France |
| 3:00pm |
EL-ThA4
Integrated Multiwavelength Parallel-processing Rotating-compensator Ellipsometer/Reflectance-difference Spectrometer for Real-time Measurement and Control of OMCVD Growth
K. Flock, M. Ebert, K.A. Bell, D.E. Aspnes, North Carolina State University |
| 3:20pm |
EL-ThA5
In-situ Monitoring of Ag Film Growth on Si(111)7x7 Surface by Optical Second Harmonic Generation
H. Hirayama, T. Kawata, K. Takayanagi, Tokyo Institute of Technology, Japan |
| 4:00pm |
EL-ThA7
RHEED Intensity Oscillation during Thermal Oxidation on Si(001) Surface with O@sub 2@
Y. Takakuwa, F. Ishida, Tohoku University, Japan |
| 5:00pm |
EL-ThA10
SR-TXRF for the Investigation of the Deposition Mechanism of Trace Cu Impurities on Si Wafer Surfaces
K. Baur, Stanford Synchrotron Radiation Laboratory, T. Homma, J. Tsukano, Waseda University, Japan, M. Watanabe, Komatsu Electronic Metals, Japan, A. Singh, S. Brennan, P. Pianetta, Stanford Synchrotron Radiation Laboratory |