IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP3
Structural Investigations for Amorphous Films Deposited by Simultaneous DC Sputtering of ZnO and In@sub 2@O@sub 3@ Targets

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Microstructure, Oxides, and Optical Properties Poster Session
Presenter: A. Fukushima, The University of Tokushima, Japan
Authors: T. Moriga, The University of Tokushima, Japan
A. Fukushima, The University of Tokushima, Japan
K. Tominaga, The University of Tokushima, Japan
I. Nakabayashi, The University of Tokushima, Japan
Correspondent: Click to Email
Oxide films in the ZnO-In@sub 2@O@sub 3@ system were deposited by simultaneous dc sputtering of ZnO and In@sub 2@O@sub 3@ facing targets at the substrate temperature of 150°C. The ratio @delta@ of the ZnO target current to the sum of both the currents was varied. In the @delta@ range from about 0.20 up to 0.67, an amorphous film with one broad diffraction peak at around 2@theta@=33° could be deposited. At the higher substrate temperature of 300°C, the crystallized films with the homologous Zn@sub k@In@sub 2@O@sub k+3@ structure (k=2 for @delta@=0.50, k=3 for @delta@=0.57, and k=5 for @delta@=0.67) were deposited in the range from 0.50 to 0.67, and the bixbyite-type In@sub 2@O@sub 3@ phase was observed in the @delta@ range of 0=<@delta@<0.50. We analyzed the peak position of the amorphous films. For example, we took the amorphous film with @delta@=0.50. The broad peak lies in the center of two peaks. One was the (008) peak which appears strongly in the homologous Zn@sub 2@In@sub 2@O@sub 5@ films. The other was the (104) peak which appears strongly in the bulk Zn@sub 2@In@sub 2@O@sub 5@. The amorphous film with @delta@=0.50 had the atomic ratio of Zn:In=1:1. These facts imply that the amorphous film with @delta@=0.50 would be comprised of NOT-ordered Zn@sub 2@In@sub 2@O@sub 5@ matrix. We will discuss a possibility of existence of ZnIn@sub 2@O@sub 4@ (k=1 in Zn@sub k@In@sub 2@O@sub k+3@), by applying this kind of concept to an amorphous films with @delta@=0.33. The @delta@-value dependence of electrical properties (resistivity, carrier concentration and Hall mobility) suggest the existence of ZnIn@sub 2@O@sub 4@.