IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP19
Growing Behavior and Luminous Characteristics of ZnGa@sub 2@O@sub 4@ Thin Film Affected by the Substrates and Heat Treatment

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Microstructure, Oxides, and Optical Properties Poster Session
Presenter: S.M. Jeong, Kyonggi University, Korea
Authors: Y.J. Kim, Kyonggi University, Korea
S.M. Jeong, Kyonggi University, Korea
Y.E. Lee, ETRI, Korea
Correspondent: Click to Email
ZnGa@sub 2@O@sub 4@:Mn phosphor powder has been well known for the green luminescence for flat panel displays because of its good chemical stability and excellent luminescent properties. However, thin film type ZnGa@sub 2@O@sub 4@:Mn has a limitation in a practical application due to its low luminous properties. In this work, the dependence of growth behaviors and luminous properties on the various substrates and heat treatment were examined. Amorphous, polycrystalline, and highly preferred oriented ZnO thin films were prepared by rf magnetron sputtering method on ITO coated glass substrates to investigate the effects of substrates. Thin film phosphors were deposited on these various substrates, and the structural, luminescent, and optical properties were characterized. It will be emphasized that the structural and luminescent properties of ZnGa@sub 2@O@sub 4@:Mn thin-film phosphors are significantly influenced by the crystallinity of the ZnO layers. On (002) highly oriented ZnO thin film, well developed crystalline ZnGa@sub 2@O@sub 4@thin film could be obtained and showed high luminescent intensity as well. Structural relations between wurzite ZnO film and spinel ZnGa@sub 2@O@sub 4@ film were also investigated to determine the growth mechanism of ZnGa@sub 2@O@sub 4@films. By heat treatment, luminous properties were improved and depended on annealing conditions such as temperature and atmosphere. Defects in as-deposited films which deteriorated the luminous properties could be annihilated by defect transportation and solid state reaction during annealing process.