IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP17
Deposition of Transparent Conductive TiN Oxide Thin Films Doped with Fluorine by PACVD

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Microstructure, Oxides, and Optical Properties Poster Session
Presenter: N. Bauduin, ENSCP-University of P.M. Curie, France
Authors: F. Arefi-Khonsari, ENCSP-University of P.M. Curie, France
N. Bauduin, ENSCP-University of P.M. Curie, France
J. Amouroux, ENSCP-University of P.M. Curie, France
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The conductivity of plasma deposited tin oxide films from a mixture of O@sub2@/Ar/Tetramethyltin (TMT) can be enhanced from 0.01 to 100 @ohm@@super@ -1.cm-1 by biasing the substrate by means of a second generator. In this work an attempt has been made to dope the films by a one step process by introducing a fluorine precursor which was SF6 with the plasma mixture used for the deposition of tin oxide films. Optical emission spectroscopy and mass spectrometry were used to study the plasma phase and the characterization of the films was carried out by different surface diagnostic techniques such as SEM, XPS and FTIR. A two fold increase of the electrical conductivity was obtained for very small flow rates of SF6 introduced in the discharge.For higher flow rates, a sharp decrease of the conductivity was obtained. For high flow rates of SF6, competitive etching and functionalization processes assisted by fluorine atoms present in the discharge took place. Although the conductivity dropped down, the optical transmission of the deposited films remained higher than 90%.Moreover, the morphology of the films was modified by the presence of SF6 with an increase of the grain size and the appearance of clusters on the surface of the films.