IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP13
The Effect of Annealing upon IR Electroluminescent Emission For Zinc Sulphide: Rare Earth Doped Thin Films

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Microstructure, Oxides, and Optical Properties Poster Session
Presenter: A.S. Kale, University of Florida
Authors: A.S. Kale, University of Florida
W. Glass, University of Florida
R. Owings, University of Florida
M.R. Davidson, University of Florida
P.H. Holloway, University of Florida
Correspondent: Click to Email
Infrared emitters (IR) enjoy a wide market today with a variety of applications ranging from commercial based fiber optic communication devices to remote controls for televisions. ZnS doped rare earth fluoride thin films typically 1µm thick have been fabricated by RF sputter deposition in the conventional metal-insulator-semiconductor-insulator-metal configuration to study a new structure for IR radiation. The current study investigates three different kinds of phosphors namely ZnS:TmF@sub3@, ZnS:NdF@sub3@ and ZnS:ErF@sub3@ for their IR versus visible emission. Electroluminescence has been investigated after different annealing conditions (as-deposited to 650°C) and time (5-60min), to study the effect on emission properties. As annealing improves the crystallinity of the film, the emission improves. The brightness versus concentration of dopant has been measured and optimized. Emission spectra of the devices have been measured from 0.35 to 1.5µm and the films studied for their emission efficiency and decay time. Methods of enhancing the IR output with respect to the visible have also been studied and reported, including codoping and condition of annealing.