IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Surface Science Thursday Sessions
       Session SS4-ThP

Paper SS4-ThP2
STM Investigation of Sn,Pb/Si(111)-(3x3) Phase at RT and LT

Thursday, November 1, 2001, 5:30 pm, Room 134/135

Session: Semiconductor Morphology Poster Session
Presenter: H. Morikawa, University of Tokyo, Japan
Authors: H. Morikawa, University of Tokyo, Japan
K. Horikoshi, University of Tokyo, Japan
S. Hasegawa, University of Tokyo, Japan
Correspondent: Click to Email
Pb,Sn/Ge(111) surfaces are well known systems for their 'phase transitions' from room-tenperature(RT) @sr@3x@sr@3 phases to low-temperature(LT) 3x3 phases. However, relatively few investigations have been made for the Pb, Sn/Si(111) systems.@footnote 1@ We have made STM studies for these surfaces both at RT and LT (70K). Although a long-range ordered 3x3 phase does not appear in STM images at LT in the Sn/Si system, we could see an apparent 3x3 domains for the Pb/Si system around defects. Only in the case of Pb/Si, defects aligns to form the 3x3 periodicity. In these systems, defects are important for inducing the 3x3 order. We investigated the defect-defect correlation for both sytems, in relation with the 'Defect Density Wave'on the Sn/Si(111).@footnote 2@ Furthermore we found @sr@3x@sr@3(RT) and 3x3(LT) islands for Pb/Si, which was not seen in the Sn case. @FootnoteText@ @footnote 1@K Horikoshi, et al,Phys.Rev.B 60,13287 (1999) @footnote 2@L Ottaviano,et al,Phys.Rev.Lett.86,1809(2001).