IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Surface Science Wednesday Sessions
       Session SS3-WeA

Paper SS3-WeA7
Molecular Resonant Quantum Wells at Organic-Metal Interfaces

Wednesday, October 31, 2001, 4:00 pm, Room 122

Session: Electronic Structure I
Presenter: G. Dutton, University of Minnesota
Authors: G. Dutton, University of Minnesota
X.-Y. Zhu, University of Minnesota
Correspondent: Click to Email

Quantum-well like molecular resonances have been observed in electron transfer at a model molecule/metal interface: C6F6/Cu(111). Two photoemission measurement reveals a transient molecular anionic resonance located at 3 eV above the Fermi level. This mol ecular resonance is dispersed parallel to the surface, i.e. resonant quantum well behavior. Both the energetic position and the dispersion of this molecular resonance depend intimately on the interfacial electronic structure and the strength of molecule-s urface interaction. With increasing coverage of pre-adsorbed atomic hydrogen which weakens molecule-surface interaction, the position of molecular resonance in C6F6 increases while the effective electron mass decreases. We conclude that the resonant molecular quantum well is confined to the interface and is a result of both molecule-molecule and molecule-surface interaction.