IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Surface Science Tuesday Sessions
       Session SS3-TuP

Paper SS3-TuP7
The Adsorption and Thermal Decomposition of Trimethylamine on Si(100)

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Adsorption/Desorption Poster Session
Presenter: L.H. Zhang, University of Nevada, Reno
Authors: L.H. Zhang, University of Nevada, Reno
A.J. Carman, University of Nevada, Reno
J. Liswood, University of Nevada, Reno
S.M. Casey, University of Nevada, Reno
Correspondent: Click to Email
Trimethylamine (TMA) adsorption on Si(100)-(2x1) has been investigated using low-energy electron diffraction, Auger electron spectroscopy (AES), and thermal desorption spectroscopy (TDS). TMA appears to undergo molecular adsorption on this surface at room temperature. By comparison to the AES results from the adsorption of methyl iodide on Si(100), it was concluded that the initial surface saturation coverage of TMA on Si(100) is 0.5 monolayers. TDS reveals a parent TMA desorption channel, as well as competing surface decomposition channels. In order to gain further physical insight into the available reaction pathways for this molecule on this surface, we have used density functional theory (DFT) to study the adsorption of TMA on simplified silicon clusters. By experimental and theoretical studies of the adsorption of TMA and its subsequent surface pyrolysis, we try to understand the bonding characteristics and possible deposition reaction pathways for TMA and similar amines on the surfaces of semiconductor wafers.