IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Surface Science Tuesday Sessions
       Session SS3-TuP

Paper SS3-TuP23
Growth Process of Self-organized Ge Quantum Dots on Si(111)-(7x7) Surface Studied by STM

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Adsorption/Desorption Poster Session
Presenter: S. Pang, Chinese Academy of Sciences, P.R. China
Authors: Y. Zhang, Chinese Academy of Sciences, P.R. China
L. Yan, Chinese Academy of Sciences, P.R. China
S. Xie, Chinese Academy of Sciences, P.R. China
S. Pang, Chinese Academy of Sciences, P.R. China
H. Gao, Chinese Academy of Sciences, P.R. China
Correspondent: Click to Email
The influence of substrate temperature on the nucleation and self-organized growth of submonolayer Ge on Si(111)-(7x7) surfaces grown by solid phase epitaxy (SPE) has been studied using scanning tunneling microscopy (STM). Ordered Ge quantum dots on the surface are formed through controlling the annealing temperature after submonolayer Ge deposition at room temperature. The formation of ordered Ge quantum dots is due to the preferential adsorption sites of Ge on Si(111)-(7x7). The formed ordered nanostructures may have a potential in the application of nanodevices.