IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Surface Science Tuesday Sessions
       Session SS3-TuP

Paper SS3-TuP20
Electron-hole Pair Generation in Adsorption of Gas-phase H(D) Atom on Pt(111) and Cu(111)

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Adsorption/Desorption Poster Session
Presenter: J.H. Kim, Seoul National University, Korea
Authors: J.H. Kim, Seoul National University, Korea
S.J. Lee, Seoul National University, Korea
J.S. Choi, Seoul National University, Korea
J. Lee, Seoul National University, Korea
Correspondent: Click to Email
Adsorption of gas species at solid surface proceeds via trapping of incident atom(or molecule) in the surface potential well, which requires an energy transfer to the surface. It is generally believed that multi-phonon creation is the dominant mechanism for the energy transfer. However, for the gas-phase H(D) atom, the lightest of all, phonon creation is expected to be negligible because of an extremely poor mass matching, and therefore other loss mechanism such as electron-hole pair creation may be the dominant mechanism.@footnote 1@. We have investigated adsorption on Pt(111) and Cu(111) surfaces at 100K of the gas-phase H(D) atom generated in a hot tungsten capillary tube at 1900K. The hot electrons and holes generated upon adsorption of H(D) atom were detected as an external short-circuit current using metal/n(p)-type Si(100) Schottky diodes. We will compare the results for the two surfaces and interpret in terms of the different electron density of states near the Fermi level. Based on these results, we will also discuss about the widely different sticking probability, saturation coverage, and abstraction reaction probability of H(D) atom on the two surfaces. @FootnoteText@@footnote 1@Nienhaus et al., Phys. Rev. Lett. 82 (1999) 446.