IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Surface Science Tuesday Sessions
       Session SS3-TuP

Paper SS3-TuP11
Adsorption and Decomposition of Dimethylisopropylsilane on Si(111) Surface

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Adsorption/Desorption Poster Session
Presenter: T.S. Yang, Sungkyunkwan University, Korea
Authors: T.S. Yang, Sungkyunkwan University, Korea
S.J. Cho, Sungkyunkwan University, Korea
J.-H. Boo, Sungkyunkwan University, Korea
J.-W. Lee, Sungkyunkwan University, Korea
S.-B. Lee, Sungkyunkwan University, Korea
Y. Kim, Korea Research Institute of Chemical Technology
Correspondent: Click to Email
The adsorption and decomposition of dimethylisopropylsilane,(CH@sub 3@)@sub 2@CHSiH(CH@sub 3@)@sub 2@ on Si(111) surface have been studied in the temperature range of 100 - 1200 K in ultrahigh vacuum by X-ray photoelectron spectroscopy, thermal desorption spectroscopy, and low-energy Cs ion reactive scattering. Dimethylisopropylsilane adsorbs molecularly on the surface at 115 K and its thermal desorption spectrum shows a board peak centered at about 250 K. Even at this low temperature, the results of the low-energy Cs ion reactive scattering indicate that the adsorbed dimethylisopropylsilane was found to partially decompose to adsorb as the Si(CH@sub 3@)@sub 2@ and (CH@sub 3@)@sub 2@CHSiH species. The former decomposes to form CH@sub 4@Si and C@sub 2@SiH@sub x@ species with increasing temperature up to about 600 K and the latter may be converted C@sub 3@H@sub y@ on the surface. Above 900 K the intermediate species completely decomposes to form SiC. The possible decomposition mechanism of dimethylisopropylsilane will be proposed.