IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Surface Science Thursday Sessions
       Session SS2-ThA

Invited Paper SS2-ThA1
The Use of Instabilities in Epitaxial Growth for Lateral Patterning of Surfaces

Thursday, November 1, 2001, 2:00 pm, Room 122

Session: Nucleation & Growth
Presenter: H.-J. Ernst, CEA Saclay, France
Correspondent: Click to Email

The use of intrinsic instabilities in growth processes is currently actively explored as a promising pathway to reach a lateral patterning of surfaces at the nanometerscale. The origin of these instabilities is traced back to the presence of an excess energy barrier for adatom diffusion over descending steps, the Ehrlich-Schwoebel barrier. Structural patterns can be created either by spontaneous self-organization of the material deposited, or by guided growth on prestructured substrates. The deposition of Cu on singular and vicinal Cu surfaces illustrates this approach, using Helium Atom Scattering (HAS), Scanning Tunneling Microscopy (STM) and Low Energy Electron Microscopy (LEEM) as structural probes. Surprisingly, the interaction of green laser light with these surfaces leads as well to atomic scale restructuring. @FootnoteText@ I like to acknowledge the contributions of F. Charra, L. Douillard, R. Gerlach, and T. Maroutian at various stages of this project.