IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Surface Science Tuesday Sessions
       Session SS+SC-TuP

Paper SS+SC-TuP9
Arsenic Incorporation into Indium Phosphide (001) Surfaces during Metalorganic Vapor-Phase Epitaxy

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Semiconductor Deposition Poster Session
Presenter: D.C. Law, University of California, Los Angeles
Authors: R.F. Hicks, University of California, Los Angeles
D.C. Law, University of California, Los Angeles
C.H. Li, University of California, Los Angeles
S.B. Visbeck, University of California, Los Angeles
Y. Sun, University of California, Los Angeles
Correspondent: Click to Email
The quality of heterointerfaces is of great importance for high performance optoelectronic devices. In this work, we report on a detailed study of the effect of arsenic exposure to indium phosphide (001) during metalorganic vapor-phase epitaxy (MOVPE). Indium phosphide surfaces were exposed to several Torr of tertiarybutylarsine (TBAs) at temperatures ranging from 200 to 600°C. Scanning tunneling micrographs reveal that arsenic exposure below 400°C yields atomically smooth surfaces with ordered reconstructions. These surfaces consist of either a single monolayer of As and P with a (2x1) structure, or half a monolayer of As incorporated into a (2x4) structure. Conversely, at temperatures above 450°C, three-dimensional islands are formed during TBAs exposure. The arsenic coverage in these structures exceeds several monolayers, indicating diffusion into the bulk. The implications of these results for the fabrication of III- V heterojunction devices will be discussed at the meeting.