IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Surface Science Tuesday Sessions
       Session SS+SC-TuP

Paper SS+SC-TuP8
Polycrystalline Si Thin Film Growth on Glass using Magnetron Sputtering

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Semiconductor Deposition Poster Session
Presenter: M.J. Jung, Sungkyunkwan University, Korea
Authors: M.J. Jung, Sungkyunkwan University, Korea
Y.M. Jung, Sungkyunkwan University, Korea
J.U. Kim, Sungkyunkwan University, Korea
J.G. Han, Sungkyunkwan University, Korea
Correspondent: Click to Email
Polycrystalline Si thin film is widely applied materials for thin film transistor of Flat Panel Display (FPD), and photovoltaic applications because of its high mobility, electrical conductivity, and high-energy conversion efficiency compared to a-Si.@footnote 1@ Over the past few years, there have been a variety of techniques on thin film growth of poly-Si. Among theses techniques, Solid Phase Crystallization (SPC) and Excimer Laser Annealing (ELA) have been the most frequently used methods. The SPC method has too high crystallization temperature (650°C) for glass substrate. On the other hand, ELA method is suitable for low temperature on the glass substrate, however, there are still problems such as non-uniformity of grain growth on the large area glass substrate as well as expensive processing cost.@footnote 2@ Recently, Metal-Induced Crystallization (MIC) of amorphous silicon has been studied for poly-Si thin films on low temperature glass@footnote 3@. We have deposited crystalline poly-Si thin films on soda-lime glass and SiO@sub2@ glass substrate as deposited by PVD at low substrate temperature using high power magnetron sputtering method. The electron mobility of the poly-Si grown on soda-lime glass and SiO@sub2@ glass at substrate temperature of 115° show 138 @cm square per Volt dot second@ and 191@cm square per Volt dot second@. Therefore, to investigate the relationships between surface and film microstructure as well as the nucleation, growth mechanism and its electrical properties of poly-Si thin film, we have studied the variation of plasma state for nucleation and growth mechanism by Langmuir probe and Optical Emission Spectroscopy (OES). The epitaxial orientation, microstructual characteristics and surface properties of the films were analyzed by TEM, XRD, and AFM. For the electrical characterization of these films, its properties were obtained from the Hall effect measurement by the Van der Pauw measurement.