IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Surface Science Tuesday Sessions
       Session SS+SC-TuP

Paper SS+SC-TuP6
Studies on Deposition of Indium Sulphide Thin Films by Silar Method

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Semiconductor Deposition Poster Session
Presenter: H.M. Pathan, Shivaji University, India
Authors: H.M. Pathan, Shivaji University, India
S.D. Sartale, Shivaji University, India
G.D. Bagde, Shivaji University, India
C.D. Lokhande, Shivaji University, India
Correspondent: Click to Email
Indium Sulphide is a promising material used as a buffer layer in Cu(InGa)Se@sub 2@ based solar cells and mini models. Successive ionic layer adsorption and reaction (SILAR) is a modified version of chemical bath deposition (CBD) method for thin film deposition. In CBD, when solutions are mixed together, the precipitation on the substrate and in the solution takes place. This results into wasteful and unavoidable formation of bulk precipitation in the solution since the reaction is not controllable. To overcome this difficulty, CBD is modified as SILAR in which substrate is immersed into separately placed cationic and anionic precursors and rinsing before every immersion with ion exchanged water to avoid homogeneous precipitation in the solution. In the present investigation, nanocrystalline semiconducting indium sulphide thin films were deposited onto glass substrates using SILAR method. For the deposition of indium sulphide thin films, preparative conditions such as concentration and pH of precursor solution and adsorption, reaction and rinsing time duration were optimized at room temperature (27 @super o@C). These deposited films were characterized for their structural, optical and electrical properties. The films are found to be nanocrystalline. The films have 2.7 eV direct optical band gap with n-type electrical conductivity.