Since the discovery of high temperature semiconductor, great efforts have been made to produce high quality thin films of the materials. The rare earth chalcogenides are of interest for applications such as thermoelectric cooler, photoelectric cells, solar cells, cold cathode emitting devices, far infrared window materials etc. The rare earth selenide have shown semiconducting properties used for high temperature device formation. Spray pyrolysis is simple and inexpensive technique for large area deposition of thin films. Spray pyrolysis technique is employed to prepare La@sub 2@Se@sub 3@ thin films from non-aquous (methanol) medium. The preparative parameters are optimized to get good quality films. The optimized pyrolysis temperature is 200@super o@C. The La2Se3 film show polycrystalline cubic structure with dominant plane (310). The calculated average grain size is about 40 nm. Scanning Electron Microscopic studies revels that La@sub 2@Se@sub 3@ films have porous fibrous network structure and presence of irregular shaped particles. From the analysis of the optical absorption data a direct allowed transition at 2.45 eV has been observed. The room temperature electrical resistivity is of the order of 10@super 4@-10@super 5@ @ohm@-cm. The films are found to be p-type semiconductor by themoemf measurement study.