We have succeeded in getting high-deposition rate and high quality for preparing hydrogenated amorphous silicon (a-Si:H) films, as well as micro-crystalline silicon（mc-Si）films, by Very-high-frequency (VHF) plasma CVD using a ladder-shaped electrode. Recently, VHF plasma CVD technique has become one of the topics in the field of the fabrication of solar cell and thin film transistors, because its high plasma density enables high-speed deposition. However, in the large area deposition, which is needed in the application of commercial production, the effective gas flow rate fed into the plasma region limits the deposition rate and the film qualities because the gas depletion condition leads to the degradation of the film quality. We developed the ladder shaped electrode, which has an advantage over a conventional parallel-plate electrode in the controllability of the gas flow. The experiments are performed using a ladder-shaped electrode consisted of 9 stainless-steel rods 160 mmÃ-160 mm in external dimension. The material gases are introduced into the plasma region between each rod of the electrode. Using the VHF-SiH4 plasma at the frequency of 60MHz, we got a-Si:H film at the deposition rate of 1.2 nm/s with the ratio of photo conductivity/dark conductivity of 106. We also applied this electrode to fabricate the mc-Si film and succeed very high-speed of 3.4 nm/s using the plasma of SiH4 diluted with H2 at the frequency of 100 MHz. These were demonstrated that this electrode is highly suitable for the production technique.