IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Surface Engineering Monday Sessions
       Session SE-MoP

Paper SE-MoP10
Effect of Heat Treatment on the Oxidation and Properties of Ion-Plated ZrN Thin Film on 304 Stainless Steel

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: Poster Session
Presenter: W.-J. Chou, National Tsing Hua University, ROC
Authors: W.-J. Chou, National Tsing Hua University, ROC
G.-P. Yu, National Tsing Hua University, ROC
J.-H. Huang, National Tsing Hua University, ROC
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It is a common practice to apply heat treatment processes for improving the structure and properties of thin films. One of the problems during heat treatment process is the contamination and oxidation of the thin film by the atmosphere in the furnace. To solve the problem, using a controlling atmosphere in the furnace, especially lowering down the oxygen partial pressure, is considered to be the most effective method. In this study, an oxygen meter was used to monitor the furnace atmosphere during the heat treatment process, and the oxygen partially pressure was controlled down to 10-15 atm. Zirconium nitride (ZrN) films deposited on 304 stainless steel, by a hollow cathode discharge ion-plating (HCD-IP) technique, was used as the specimen in heat treatment. The thickness and composition of the coated specimen were controlled to be 0.6 mm and N/Zr=1, respectively. The residual stress and preferred orientations of the ZrN films were determined using X-ray diffraction (XRD). Hardness of the films was measured by nanoindentation. Atomic force microscopy (AFM) was used to study the surface roughness of thin film. The extent of surface oxidation and composition of the ZrN film were determined using X-ray photoelectron spectrometry (XPS). The (111) texture coefficient increases with increasing treatment temperature. The hardness of the ZrN film was rapidly increased after heat treatment. The oxidation of the thin film was incapable avoided even in the gas atmosphere with an oxygen partially pressure lower than 10-15 atm.