IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Surface Engineering Monday Sessions
       Session SE-MoP

Paper SE-MoP1
Developments in Ammonium-based Solution with Inhibitors and Ionic Carboxylic Acids on Post Cu CMP Cleaning for Removal Colloidal Silica Abrasives

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: Poster Session
Presenter: T.-C. Wang, National Chiao Tung University, Taiwan, R.O.C.
Authors: S.-Y. Chiu, National Chiao Tung University, Taiwan, R.O.C.
T.-C. Wang, National Chiao Tung University, Taiwan, R.O.C.
Y.-L. Wang, National Chiao Tung University, Taiwan, R.O.C.
M.-S. Tasi, National Nano Device Laboratories, Taiwan, R.O.C.
M.-S. Feng, National Chiao Tung University, Taiwan, R.O.C.
Correspondent: Click to Email
During the Cu CMP process with colloidal silica based slurry, colloidal slica abrasives would be selectively adsorbed onto copper line. These particle defects will influence the yields of the folloing thin deposition and lithography process. In this study, an approache are proposed to overcome the corrosion problem of copper line and to remove chemisorbed colloidal silica from polished copper surface. The clean solution would be formulated by adding ionic carboxylic acids into ammonium-based solution with inhibitors. We also elucidated the influence of electrostatic interaction between colloidal silica abrasives, copper and silicon dioxide films. Electrochemical polarizatio, zeta potetial, contact angle, AFM, SEM, surface scan, KLA defect mapping, and electro-property analyses are being evaluated for monitoring silicon dioxide (the polish stop layer) and copper films during post Cu CMP cleaning process. By means of these analytical methods, an suitable post Cu CMP cleaning chemistry in alkaline ammonium-based solution with inhibitor and carboxylic acids was developed to effectively remove colloidal abrasives left on the wafer, meanwhile not to cause copper wires corrosion.