IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Semiconductors Monday Sessions
       Session SC-MoM

Paper SC-MoM5
Characterization of GaPN Layers Grown by Molecular Beam Epitaxy on Si Substrates

Monday, October 29, 2001, 11:00 am, Room 124

Session: Band-Engineered Electronic Materials
Presenter: M.A. Santana-Aranda, Centro de Investigacion y de Estudios Avanzados del IPN, Mexico
Authors: M.A. Santana-Aranda, Centro de Investigacion y de Estudios Avanzados del IPN, Mexico
M. Melendez-Lira, Centro de Investigacion y de Estudios Avanzados del IPN, Mexico
M. Lopez-Lopez, Centro de Investigacion y de Estudios Avanzados del IPN, Mexico
K. Momose, Toyohashi University of Technology, Japan
H. Yonezu, Toyohashi University of Technology, Japan
S. Jiménez-Sandoval, Cinvestav-IPN, Unidad Querétaro, Mexico
Correspondent: Click to Email
The heteroepitaxial growth of III-V-N alloys with high crystal quality on Si substrates could make possible the monolithic integration of III-V-N based light-emitting devices with the Si based microelectronics. However the III-V-N/Si heteroepitaxy present serious problems like the lattice mismatch and the difference in thermal expansion coefficients. In order to solve these problems, we have been studying the growth of GaPN with a N concentration of 2% that is lattice-matched to the Si substrate. The epilayers were grown by molecular beam epitaxy employing an RF plasma source to produce active nitrogen species. First, a 3.2µm Si homoepitaxial layer was grown on the substrate, followed by a thin (20nm) GaP layer to avoid the strong interaction of nitrogen with Si. Then, the GaP@sub 0.98@N@sub 0.02@layer was grown with a thickness of 400nm. In order to avoid the generation of crystal defects induced by the different thermal expansion coefficients the epilayer was capped first with a 16nm thick GaP layer and finally with a 300nm thick Si layer. The structural and optical properties of this sample were compared with those of a GaPN layer on GaP/Si but without the capping layers, and with those of a GaPN layer on a GaP substrate. Transmission electron microscopy showed that the capped heterostructure was free of crystal defects. While the other samples presented dislocations and cracks. The photoluminescence at 10K associated to GaP was blue shifted in the capped structure confirming that the GaP layers were coherently strained to the Si lattice. Raman spectroscopy showed narrow peaks in the capped structure reflecting the high structural quality of this sample, for the other samples the Raman peaks were wide suggesting the presence of disorder.