IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Semiconductors Monday Sessions
       Session SC-MoM

Paper SC-MoM3
Microstructure and Optical Properties of (InGa)(AsN) Alloys and Nanostructures

Monday, October 29, 2001, 10:20 am, Room 124

Session: Band-Engineered Electronic Materials
Presenter: X. Weng, University of Michigan, Ann Arbor
Authors: X. Weng, University of Michigan, Ann Arbor
S. Clarke, University of Michigan, Ann Arbor
A. Daniel, University of Michigan, Ann Arbor
J. Holt, University of Michigan, Ann Arbor
S. Krishna, University of Michigan, Ann Arbor
S. Kumar, University of Michigan, Ann Arbor
J. Sipowska, University of Michigan, Flint
V. Rotberg, University of Michigan, Ann Arbor
R. Clarke, University of Michigan, Ann Arbor
A. Francis, University of Michigan, Ann Arbor
P.K. Bhattacharya, University of Michigan, Ann Arbor
R.S. Goldman, University of Michigan, Ann Arbor
Correspondent: Click to Email
Mixed anion nitride-arsenide compound semiconductor heterostructures are promising for devices with emission or detection wavelengths throughout the near infrared range. However, a limited miscibility of InGaAsN on the anion sublattice leads to the formation of phase separation-induced alloy nanostructures.@footnote 1,2@. We have synthesized InGaAsN alloys and nanostructures by N ion implantation into GaAs and InAs, with a variety of implantation and rapid thermal annealing conditions. We have analyzed the composition, structure, and properties of the resulting alloys and nanostructures, using nuclear reaction analysis, transmission electron microscopy (TEM), x-ray energy dispersive spectrometry, x-ray diffraction, photoluminescence, and cathodoluminescence spectroscopy. For 50 keV N ion implanted GaAs and InAs substrates, high resolution cross-sectional TEM reveals ~5nm diameter amorphous nanostructures surrounded by crystalline matrices. For 100 keV N ion implanted GaAs epilayers, crystalline nanostructures surrounded by disordered matrices are apparent. Electron and x-ray diffraction indicate that these nanostructures are cubic phases with lattice parameters similar to that of pure GaN. The crystalline nanostructures exhibit significant photoluminescence in the near infrared range. The apparent lowering of the fundamental band gap of the GaN nanostructures is consistent with strain-induced band gap narrowing of a GaN-rich cluster.@footnote 1@. We will discuss the mechanisms of formation and coarsening of these nanos truc tures, correlations between their optical and structural properties, and comparisons with similar alloys and nanostructures synthesized by molecular beam epitaxy. @FootnoteText@@footnote 1@R. S. Goldman et al., Appl. Phys. Lett. 69, 3698 (1996), J. Electr. Mater. 26, 1342 (1997). @footnote 2@H. P. Xin et al., Appl. Phys. Lett. 74, 2337 (1999).