IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Semiconductors Tuesday Sessions
       Session SC+SS-TuA

Paper SC+SS-TuA3
Ge Nanoclusters Prepared from Solution with Chemically Tailored Surfaces

Tuesday, October 30, 2001, 2:40 pm, Room 122

Session: Semiconductor Nanostructures and Processing
Presenter: B.R. Taylor, Lawrence Livermore National Laboratory
Authors: B.R. Taylor, Lawrence Livermore National Laboratory
S.M. Kauzlarich, University of California, Davis
L.J. Terminello, Lawrence Livermore National Laboratory
A.W. van Buuren, Lawrence Livermore National Laboratory
C.F.O. Bostedt, Lawrence Livermore National Laboratory
T.M. Willey, Lawrence Livermore National Laboratory
Correspondent: Click to Email
Ge nanoclusters have been prepared by a solution reaction between the Zintl salt Mg@sub 2@Ge and GeCl@sub 4@ in refluxing diglyme@footnote 1@ and triglyme.@footnote 2@ The nanoclusters are produced in a range of sizes from 2 to 10 nm in diameter, and are quantum confined. The particles were characterized by high-resolution transmission electron microscopy and Fourier transform infrared spectroscopy. The shift in band gap of the nano clusters was measured by optical spectroscopy and X-ray photoelectron spectroscopy . @FootnoteText@ @footnote 1@ Taylor, B. R.; Kauzlarich, S. M.; Lee, H. W. H.; Delgado, G. R. Chem. Mater., 1998, v. 10, 22-24. @footnote 2@ Taylor, B. R.; Kauzlarich, S. M.; Lee, H. W. H.; Delgado, G. R. Chem. Mater., 1999, v. 11, 2493-2500.