IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Semiconductors Tuesday Sessions
       Session SC+SS-TuA

Paper SC+SS-TuA2
Growth of Ag Nanowires on Atomically Flat Ag films Formed on GaAs(110) Surfaces

Tuesday, October 30, 2001, 2:20 pm, Room 122

Session: Semiconductor Nanostructures and Processing
Presenter: H.B. Yu, University of Texas at Austin
Authors: H.B. Yu, University of Texas at Austin
C.-S. Jiang, University of Texas at Austin
C.-K. Shih, University of Texas at Austin
Correspondent: Click to Email
By using the scanning tunneling microscopy, we study the growth and evolution of Ag nanowires on atomically flat Ag films deposited onto GaAs(110) substrates. We show the ability to grow Ag nanowires with a well-defined width and very large aspect ratio (>150:1). For atomically flat Ag-film on GaAs(110), it has been shown that the surface has a quasi-periodic superstructure with long (L) and short (S) wavelength modulations arranged according to the Fibonacci sequence.@footnote 1,2@ We find that for the Ag nanowires grown on such a surface, the width of the nanowires is quantized in units of L (1.7 nm) or S (1.3 nm) segments. Very long (> 1 micron) nanowires of such a well-defined width can be formed on the surface with its ends terminated at the edge of the voids on the Ag film. The formation mechanism and the electronic properties of such nanowires will be discussed. @FootnoteText@@footnote 1@A.R. Smith, K.-J. Chao, Q. Niu, and C.K. Shih, Science 273, 226 (1996). @footnote 2@Ph. Ebert, K.-J. Chao, Q. Niu, and C.K. Shih, Phys. Rev. Lett. 83, 3222 (1999).