IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Semiconductors Monday Sessions
       Session SC+SS-MoA

Paper SC+SS-MoA9
Two Dimensional Scattering-images of Lateral Structured GaAs/AlAs Systems as an Example for Diffuse X-ray Scattering at Interfaces

Monday, October 29, 2001, 4:40 pm, Room 122

Session: Semiconductor Surfaces
Presenter: J. Stuempel, Physikalisch-Technische Bundesanstalt, Germany
Authors: J. Stuempel, Physikalisch-Technische Bundesanstalt, Germany
I. Busch, Physikalisch-Technische Bundesanstalt, Germany
Correspondent: Click to Email
Two-dimensional X-ray scattering pattern in reciprocal space (space map) is measured by the reflection of X-rays at grazing incidence. These images are composed of specular and diffuse scattered components. The essential information about the statistical parameters of the interfaces (roughness, correlation length, lateral symmetries, etc.) is contained in the diffuse part of the scattered radiation. As an example of highly structured interfaces we use an GaAs/AlAs multilayer system. The interfaces of a multilayer grown on a substrate with a small miscut (angle about 2 °) between the surface and the (100)-plane reconstructs to a lateral correlated system with step hights of some nanometers. The measured space maps of these systems will be presented in detail. Due to a quantitative data interpretation the results will be compared with numerical simulated data. The simulation is based on a modified scattering theory. The underlaying theory will be presented within the talk.